Chemical vapor deposition apparatus

ABSTRACT

This invention includes chemical vapor deposition apparatus, methods of chemical vapor depositing an amorphous carbon comprising layer on a substrate, and methods of chemical vapor depositing at least one of Si 3 N 4  and Si x O y N z  on a substrate. In certain implementations, a gas output manifold having at least one gas output to a deposition chamber and at least three gas inputs is utilized. In certain implementations, a remote plasma generator is utilized. In certain implementations, at least one cleaning gas input line feeds the remote plasma generator. In certain implementations, the at least one cleaning gas input line includes an amorphous carbon cleaning gas input and an Si 3 N 4  or Si x O y N z  cleaning gas input.

TECHNICAL FIELD

This invention relates to chemical vapor deposition apparatus, tomethods of chemical vapor depositing an amorphous carbon comprisinglayer on a substrate, and to methods of chemical vapor depositing atleast one of Si₃N₄ and Si_(x)O_(y)N_(z) on a substrate.

BACKGROUND OF THE INVENTION

Integrated circuits are typically formed on a semiconductor substrate,such as a silicon wafer or other semiconducting material. In general,layers of various materials which are either semiconducting, conductingor insulating are utilized to form the integrated circuits. By way ofexample, the various materials are doped, ion implanted, deposited,etched, grown, etc. using various processes. Further, a continuing goalin semiconductor processing is to continue to strive to reduce the sizeof individual electronic components, thereby enabling smaller and denserintegrated circuitry.

One technique for patterning and processing semiconductor substrates isphotolithography. Such typically includes deposition of a photoresistlayer which can be processed to modify the solubility of such layer incertain solvents. For example, portions of the photoresist layer can beexposed through a mask/reticle to change the solvent solubility of theexposed regions versus the unexposed regions compared to theas-deposited state. Thereafter, the exposed or unexposed portions can beremoved depending on the type of photoresist thereby leaving a maskingpattern of the photoresist on the substrate. Adjacent areas of thesubstrate next to the masked portions can be processed, for example byetching or ion implanting, to effect the desired processing of thesubstrate adjacent the masking material.

In certain instances, multiple different layers of photoresist areutilized in a given masking/photolithographic step. Further, thephotolithographic masking and patterning might be combined with one ormore other layers. One such process forms what is commonly referred toas a “hard mask” over the substrate prior to deposition of thephotoresist layer or layers. The photoresist layer is then patterned,for example as described above, to form masking blocks over the hardmask. The hard mask is then etched using the photoresist as a mask totransfer the pattern of the photoresist to the hard mask. Thephotoresist may or may not be removed immediately thereafter. Hard maskssuch as just described provide a more robust masking pattern thanphotoresist alone, for example should the photoresist be completelyeroded/etched away.

One material utilized as a hard mask is amorphous carbon. The amorphouscarbon might be doped with other materials, for example boron and/ornitrogen. When etching oxide material using an amorphous carbon as ahard mask, the etching typically removes the oxide at a rate of aboutten times faster than it removes amorphous carbon.

In many instances, it is desirable to use an antireflective coating(with or without a hard mask) over which the photoresist is deposited.In the absence of an antireflective coating, some underlying substratesreflect a considerable amount of the incident radiation which canadversely affect the patterning of the photoresist. Accordingly evenwhen using amorphous carbon hard mask patterning, an antireflectivecoating would typically be employed intermediate the amorphous carbonand the photoresist layer. The antireflective coating might be composedof a single layer, or multiple layers. For example, one antireflectivecoating might be inorganic, and another antireflective coating might beorganic. For example in one implementation, an antireflective coatingover amorphous carbon comprises a first inorganic layer and a secondorganic layer. The second organic layer might be utilized where thefirst antireflective inorganic layer does not provide the desiredantireflective effect when used alone. Regardless, photoresist isdeposited thereafter, and then typically patterned using wet solventprocessing to form openings through the photoresist to theantireflective layer(s). The mask pattern in the photoresist layer isthen typically transferred through the antireflective layer(s), andthrough the amorphous carbon layer, utilizing one or more dryanisotropic etching techniques. Then, one or more suitable differentchemistries are typically utilized to extend the openings through thelayer or layers inwardly of the amorphous carbon layer.

One common inorganic anti-reflective coating material is siliconoxynitride. The typical equipment utilized in depositing amorphouscarbons and in depositing silicon oxynitrides are two chemical vapordeposition tools largely due to the different deposition precursor gasesand different cleaning issues and gases associated with the twodifferent depositions. Accordingly, different chemical vapor depositionchambers with their own different respective process kit hardware havebeen utilized in depositing these layers.

The invention was motivated in addressing and improving upon theabove-described issues. However, it is in no way so limited. Theinvention is only limited by the accompanying claims as literally worded(without interpretative or other limiting reference to the abovebackground art description, remaining portions of the specification orthe drawings), and in accordance with the doctrine of equivalents.

SUMMARY

This invention relates to chemical vapor deposition apparatus, tomethods of chemical vapor depositing an amorphous carbon comprisinglayer on a substrate, and to methods of chemical vapor depositing atleast one of Si₃N₄ and Si_(x)O_(y)N_(z) on a substrate. In oneimplementation, a chemical vapor deposition apparatus includes adeposition chamber configured to receive a substrate to be depositedupon. The apparatus also includes a remote plasma generator. A gasoutput manifold is in fluid communication with the deposition chamber.The gas output manifold comprises at least one gas output to thedeposition chamber and at least three gas inputs. The at least three gasinputs comprise a first gas input line fed by at least a nitrogendeposition precursor source line, a silicon deposition precursor sourceline, and an oxygen deposition precursor source line effective todeposit at least one of Si₃N₄ and Si_(x)O_(y)N_(z) on a substratereceived within the deposition chamber and over at least some depositionchamber internal surfaces. One of the gas inputs comprises a second gasinput line which is fed by at least one carbon deposition precursorsource line effective to deposit an amorphous carbon comprising materialon a substrate received with the deposition chamber surface and over atleast some deposition chamber internal surfaces. One of the gas inputscomprises a third gas input line which is fed by the remote plasmagenerator. At least one cleaning gas input line feeds the remote plasmagenerator. The at least one cleaning gas input line comprises anamorphous carbon cleaning gas input and an Si₃N₄ or Si_(x)O_(y)N_(z)cleaning gas input.

In one implementation, a method of chemical vapor depositing anamorphous carbon comprising layer on a substrate comprises providing adeposition tool comprising a deposition chamber, a gas output manifoldin upstream fluid communication with the deposition chamber, and aremote plasma generator in upstream fluid communication with the gasoutput manifold. A substrate is positioned within the depositionchamber. A carbon comprising gas is flowed to the gas output manifoldeffective to deposit an amorphous carbon comprising layer on thesubstrate within the deposition chamber and over at least somedeposition chamber internal surfaces. After depositing the amorphouscarbon comprising layer, the substrate is removed from the depositionchamber. Thereafter, an oxygen containing cleaning gas is flowed throughthe remote plasma generator, into the gas output manifold and into thedeposition chamber, and a plasma is generated within the depositionchamber with the oxygen containing cleaning gas effective to remove atleast some of the amorphous carbon from the deposition chamber internalsurfaces.

In one implementation, a method of chemical vapor depositing at leastone of Si₃N₄ and Si_(x)O_(y)N_(z) on a substrate comprises providing adeposition tool comprising a deposition chamber, a gas output manifoldin upstream fluid communication with the deposition chamber, and aremote plasma generator in upstream fluid communication with the gasoutput manifold. The gas output manifold comprises at least one gasoutput to the deposition chamber and at least three gas inputs. The atleast three gas inputs comprises a first gas input line fed by at leasta nitrogen deposition precursor source line, a silicon depositionprecursor source line, and an oxygen deposition precursor source line.One of the gas inputs comprises a second gas input line fed by at leastone carbon deposition precursor source line. One of the gas inputscomprises a third gas input line fed by the remote plasma generator. Atleast one cleaning gas input line feeds the remote plasma generator, andcomprises an amorphous carbon cleaning gas input and an Si₃N₄ orSi_(x)O_(y)N_(z) cleaning gas input. A substrate is positioned withinthe deposition chamber. A silicon deposition precursor and at least oneof a nitrogen deposition precursor and an oxygen deposition precursorare flowed through the first gas input line to the gas output manifoldeffective to deposit at least one of Si₃N₄ and Si_(x)O_(y)N_(z) on thesubstrate within the deposition chamber and over at least somedeposition chamber internal surfaces.

In one implementation, a method of chemical vapor depositing anamorphous carbon comprising layer on a substrate and at least one ofSi₃N₄ and Si_(x)O_(y)N_(z) on a substrate, comprises:

(a) positioning a substrate within a deposition chamber;

(b) depositing a layer comprising at least one of Si₃N₄ andSi_(x)O_(y)N_(z) over the substrate within the deposition chamber andover at least some deposition chamber internal surfaces;

(c) depositing a layer comprising amorphous carbon over the substratewithin the deposition chamber and over at least some deposition chamberinternal surfaces, with (b) and (c) occurring prior to any removing ofthe substrate from the deposition chamber;

(d) after (b) and after (c), removing the substrate from the depositionchamber;

(e) after removing the substrate from the deposition chamber, removingat least some of the at least one of Si₃N₄ and Si_(x)O_(y)N_(z) from thedeposition chamber internal surfaces with a Si₃N₄ and Si_(x)O_(y)N_(z)cleaning gas at subatmospheric pressure; and

(f) after removing the substrate from the deposition chamber, removingat least some of the amorphous carbon comprising layer from thedeposition chamber internal surfaces with an amorphous carbon comprisingcleaning gas at subatmospheric pressure, with (e) and (f) occurringprior to any exposure of the deposition chamber to room atmosphericpressure after (d).

Other implementations and aspects are contemplated.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

FIG. 1 is a diagrammatic schematic of a chemical vapor depositionapparatus in accordance with an aspect of the invention.

FIG. 2 is an enlarged diagrammatic representation of a preferredembodiment portion of the preferred embodiment chemical vapor depositionapparatus of FIG. 1.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

This disclosure of the invention is submitted in furtherance of theconstitutional purposes of the U.S. Patent Laws “to promote the progressof science and useful arts” (Article 1, Section 8).

The invention encompasses various chemical vapor deposition apparatusand various methods of chemical vapor depositing materials on substratesreceived within chemical vapor deposition chambers. The apparatusaspects are not limited by any method aspects, nor are any methodaspects limited by apparatus aspects, unless language pertinent theretois literally, expressly provided within a claim under analysis.Accordingly, the method aspects and apparatus aspects are not to becross-read relative to one another unless language pertinent to theother is literally expressed in a claim under analysis.

A first embodiment chemical vapor deposition apparatus is indicatedgenerally with reference numeral 10 in FIG. 1. Such schematicallydepicts the various plumbing associated in the preferred embodiment. Byway of example and not of limitation, the depicted opposing pairs ofapex touching triangles constitute valves, and the depicted diamonds orsquares having horizontal diagonal dashed lines extending thereacrossconstitute filters. The depicted squares having full diagonal lines areflow gauges. The valves with the left laterally extending T's areexemplary manually controlled valves, where the other valves are ideallypneumatically controlled. The depicted row of rectangles independentlylabeled FC are flow controllers sized or otherwise configured to providedesired precisely controlled flow rates of gases therethrough.

Chemical vapor deposition apparatus 10 comprises a deposition chamber DCconfigured to receive a substrate to be deposited upon. By way ofexample only, FIG. 2 diagrammatically depicts an exemplary depositionchamber DC having a substrate support 14 over which a substrate 16 to bedeposited upon is received. An exemplary preferred substrate is asemiconductor substrate. In the context of this document, the term“semiconductor substrate” or “semiconductive substrate” is defined tomean any construction comprising semiconductive material, including, butnot limited to, bulk semiconductive materials such as a semiconductivewafer (either alone or in assemblies comprising other materialsthereon), and semiconductive material layers (either alone or inassemblies comprising other materials). The term “substrate” refers toany supporting structure, including, but not limited to, thesemiconductive substrates described above. Deposition chamber DCincludes a gas showerhead 12 received therein for emitting depositionand/or cleaning gases to within the chamber. Deposition chamber DC canbe considered as having internal surfaces 15 comprising internal exposedsidewalls defining the chamber volume within which substrate 16 isdeposited upon as well as surfaces of process kit hardware receivedwithin such internal volume. An exemplary internal volume for a singlechamber DC is 6.75 liters.

In one preferred embodiment, apparatus 10 is a plasma enhanced chemicalvapor deposition apparatus comprising at least one plasma generatingelectrode within deposition chamber DC, preferably an RF generator. Byway of example only, showerhead 12 can be configured to be a plasmagenerating electrode, and support 14 can either be powered or connectedto ground, or even allowed to have its potential float when plasmageneration might be utilized. Grounding of support 14 is preferred.

Chemical vapor deposition apparatus 10 includes a remote plasmagenerator RPG (FIG. 1). Apparatus 10 also includes a gas output manifoldOM which is in fluid communication with deposition chamber DC. The gasoutput manifold comprises at least one gas output to deposition chamberDC and at least three gas inputs. FIG. 1 depicts the exemplary gasinputs where the arrowheads pointing to gas output manifold OM contactthe diagrammatic depicted box, with the gas output being depicted wherethe line with an arrowhead pointing to deposition chamber DC contactswith and extends from gas output manifold box OM. In the illustrated andpreferred embodiment, gas output manifold OM has only three gas inputsand only one gas output.

Gas output manifold OM might be received internally within or externallyof deposition chamber DC. Most preferred is receipt of the outputmanifold externally of deposition chamber DC. Regardless in thepreferred embodiment, gas output manifold DC feeds to showerhead 12within deposition chamber DC, although a showerhead is in no wayrequired in all aspects of the invention. Further, a “gas outputmanifold” as utilized in the context of this document does not encompassa deposition chamber showerhead.

The at least three gas inputs of gas output manifold OM comprise a firstgas input line 20, a second gas input line 22, and a third gas inputline 24. First gas input line 20 is fed by at least a nitrogendeposition precursor source line, a silicon deposition precursor sourceline, and an oxygen deposition precursor source line effective todeposit at least one of Si₃N₄ and Si_(x)O_(y)N_(z) on a substratereceived within deposition chamber DC as well as over at least some ofdeposition chamber internal surfaces 15. In the context of this documentunless otherwise limited, “x” is a real number greater than zero, “y” isa real number greater than zero, and “z” is a real number greater thanor equal to zero in the Si_(x)O_(y)N_(z) designation. Further throughoutthis document, use of Si₃N₄ and Si_(x)O_(y)N_(z) does not precludeincorporation of other materials in the deposited layer. For example,and by way of example only, hydrogen might be incorporated in theformation of hydrogenated silicon rich silicon oxide and/or silicon richsilicon oxynitride.

Further in reduction to practice examples, two output manifolds OM fedtwo deposition chambers DC, with lines 20, 22 and 24 splitting to feedtwo output manifolds OM. Accordingly, the exemplary preferred flow ratesprovided below are for a two 6.75 liter chambers DC fed in parallel bytwo gas output manifolds OM.

By way of example only, flow lines 26 and 28 with their associatedillustrated hardware comprise exemplary nitrogen deposition precursorsource lines. An exemplary flow controller FC for line 26 is a nominal500 sccm flow controller for preferably controlling NH₃ flow at from 50sccm to 450 sccm during a deposition. An exemplary flow controller FCfor line 28 is nominally 10 slm for preferably regulating N₂ flow atfrom 500 sccm to 9.5 slm during a deposition.

An exemplary silicon deposition precursor source line is either of lines30 and 32 designated, by way of example only, for feeding silane.Different silicon deposition precursor source lines, or other depositionprecursor source lines of the same composition, might be provided forprecisely controlling different flow rates at different time during adeposition. For example, and by way of example only, an exemplary flowrate for one of the depicted flow controllers FC is a nominal 300 sccmcontroller preferably operable from 30 sccm to 270 sccm during adeposition, with the other depicted flow controller FC being anexemplary nominal 1000 sccm flow controller preferably operable from 100sccm to 900 sccm.

An exemplary oxygen deposition precursor source line is either of lines34 and 36 and their associated hardware, depicting by way of exampleonly an oxygen deposition precursor source as being N₂O. Exemplarypreferred flow rates for two different flow controllers FC associatedwith lines 34 and 36 are a nominal 500 sccm controller for a preferredflow rate control between 50 sccm and 450 sccm, and a nominal 5 slm flowcontroller for a preferred flow between 500 sccm and 4.5 slm.

Preferred embodiment chemical vapor deposition apparatus 10 alsoincludes a first inert deposition process gas source line 38 which feedsfirst gas input line 20. Alternately or additionally considered, line 28might be utilized as a first inert deposition process gas source line.In the context of this document, an “inert deposition process gas” is agas utilized in a deposition process but is inert to contributingappreciable material that deposits into the layer being formed withindeposition chamber DC. By way of example only, FIG. 1 depicts firstinert deposition process gas source line 38 as connecting with a heliumsource. Further by way of example only, an exemplary flow controller FCfor line 38 is a nominal 5 slm controller, preferably for regulatinghelium flow at from 500 sccm to 4.5 slm. For example, and by way ofexample only, consider deposition of Si_(x)O_(y)N_(z) where each of x, yand z are greater than zero. Exemplary deposition gas flows include N₂O,SiH₄, NH₃, and He from a suitable combination of the depicted andreferred to source lines. N₂ from line 28 might additionally be utilizedwith or in place of He from line 38. Further by way of example only,where the deposited material was to be Si₃N₄, exemplary gas flows duringthe deposition include N₂, NH₃ and SiH₄ from a suitable combination ofthe depicted and referred to source lines.

The preferred embodiment chemical vapor deposition apparatus 10 alsopreferably comprises a second inert deposition process gas source line40 preferably configured for a lower inert flow rate than first inertdeposition process gas source line 38 and line 28 are configured. By wayof example only, an exemplary flow controller FC for line 40 is anominal 1000 sccm flow controller, preferably configured to preciselycontrol flow of helium therethrough at from 100 sccm to 900 sccm duringa deposition. An exemplary non-limiting reason or purpose for secondinert deposition process gas source line 40 is provided below.

In the depicted preferred embodiment, second inert deposition precursorgas source line 40 joins with oxygen deposition precursor source line 34and/or 36 upstream of first gas input line 20, for example at a location41. Further, second inert deposition process gas source line 40 joinswith first inert deposition process gas source line 38 upstream of firstgas input line 20, for example at a location 43.

Second gas input line 22 is fed by at least one carbon depositionprecursor source line effective to deposit an amorphous carboncomprising material on a substrate received within the depositionchamber and also over at least some deposition chamber internal surfaces15. Source line 42 is one exemplary carbon deposition precursor sourceline, with the depicted exemplary carbon deposition precursor being ahydrocarbon, more specifically C₃H₆. In one preferred embodiment, carbondeposition precursor source line 42 is operable with second inertdeposition process gas source line 40 in a manner effective to depositan amorphous carbon comprising material within the deposition chamber,and preferably an amorphous carbon comprising material which istransparent to visible light, and as will be more fully developed below.Typically, deposition of an amorphous carbon comprising layer utilizes alower inert deposition process gas flow rate than an inert depositionprocess gas flow rate occurring during deposition of Si_(x)O_(y)N_(z)where z is greater than zero. Further by way of example only, anexemplary flow controller FC for line 42 is a nominal 3 slm controller,preferably for regulating C₃H₆ flow at from 300 sccm to 2.7 slm.

Third gas input line 24 is fed by remote plasma generator RPG. At leastone cleaning gas input line 25 feeds remote plasma generator RPG. The atleast one cleaning gas input line 25 comprises an amorphous carboncleaning gas input 27 and an Si₃N₄ or Si_(x)O_(y)N_(z) cleaning gasinput 29. Inputs 27 and 29 could also be considered as constitutingcleaning gas input lines that, if desired, could connect directly withremote plasma generator RPG as compared to joining into a line 25 as isshown. In the illustrated preferred embodiment, only one cleaning gasinput line 25 feeds remote plasma generator RPG.

Amorphous oxygen carbon cleaning gas input 27 is depicted as comprisingan oxygen, here O₂, source line 44 for feeding oxygen as the amorphouscarbon cleaning gas. By way of example only, an exemplary flowcontroller FC for line 44 is a nominal 3 slm controller, preferably forregulating O₂ flow at from 300 sccm to 2.7 slm. The illustrated Si₃N₄ orSi_(x)O_(y)N_(z) cleaning gas input 29 comprises a cleaning gas sourceline 46 depicted as feeding NF₃ as a Si₃N₄ or Si_(x)O_(y)N_(z) cleaninggas. By way of example only, an exemplary flow controller FC for line 46is a nominal 3 slm controller, preferably for regulating NF₃ flow atfrom 300 sccm to 2.7 slm. An inert cleaning gas line 48 is also depictedwhich would typically flow with the NF₃ during cleaning of Si₃N₄ orSi_(x)O_(y)N_(z) from deposition chamber DC. By way of example only, anexemplary flow controller FC for line 48 is a nominal 5 slm controller,preferably for regulating Ar flow at from 500 sccm to 4.5 slm. N₂ purgelines 50 and 52 are depicted, and would typically not be utilized duringdeposition or cleaning as described above.

Aspects of the invention also encompass methods of chemical vapordepositing an amorphous carbon comprising layer on a substrate, a methodof chemical vapor depositing at least one of Si₃N₄ and Si_(x)O_(y)N_(z)on a substrate, and depositing both an amorphous carbon comprising layerand at least one of Si₃N₄ and Si_(x)O_(y)N_(z) on a substrate. In oneimplementation, a method of chemical vapor depositing an amorphouscarbon comprising layer on a substrate includes providing a depositiontool comprising a deposition chamber, a gas output manifold in upstreamfluid communication with the deposition chamber, and a remote plasmagenerator in upstream fluid communication with the gas output manifold.By way of example only in this methodical context, FIG. 1 depicts suchan exemplary deposition tool 10.

A substrate is positioned within the deposition chamber, for exampledeposition chamber DC. A carbon comprising gas is flowed to the gasoutput manifold effective to deposit an amorphous carbon comprisinglayer on the substrate within the deposition chamber and over at leastsome deposition chamber internal surfaces. The amorphous carboncomprising layer might be doped with other materials (i.e., boron and/ornitrogen) or be undoped, and regardless most preferably is depositedfrom a carbon comprising gas comprising a hydrocarbon, with theamorphous carbon comprising layer being transparent to visible light.Preferably, such is accomplished by forming the amorphous carboncomprising layer to have a low absorption coefficient. For example, thevisible light range is an optical range of the electromagnetic spectrumhaving light/electromagnetic radiation which is visible to human eyes.The visible light range includes any light having a wavelength betweenabout 400 nm (nanometers) and about 700 nm. The non-visible light rangeis the range of the entire electromagnetic spectrum minus the visiblelight range. Some examples of the non-visible light range includeelectromagnetic radiations with wavelengths between 700 nm and 1millimeter (infrared light), wavelengths between 10 nm and 400 nm(ultraviolet light), and wavelengths between 0.01 nm and 10 nm (X-ray).

In the context of this document, an amorphous carbon comprising layerthat is transparent to visible light means that the amorphous carboncomprising layer has a substantially low absorption coefficient (k) inwhich k has a range between about 0.15 and about 0.001 at wavelength 633nm. The amorphous carbon comprising layer transparent to visible lightrange radiation by way of example only might be formed at a temperaturefrom about 200° C. to about 450° C., with an exemplary preferredpressure range being from about 3 Torr to about 7 Torr. A specificpreferred example is 375° C. and 5 Torr. Such deposition preferablyoccurs by plasma generation, with an exemplary power applied to theshowerhead being from 500 watts to 1100 watts, with 800 watts being aspecific preferred example. An exemplary flow rate for the C₃H₆ is from400 sccm to 2400 sccm, with 1450 sccm being a specific preferredexample. An exemplary preferred flow rate for the helium is from 250sccm to 650 sccm, with 450 sccm being a specific preferred example. Anexemplary preferred spacing of the showerhead/substratesupport-susceptor is 240 mils. Exemplary additional or other hydrocarbongases utilizable in producing transparency as described include CH₄,C₂H₂, C₂H₄, C₂H₆, and C₃H₈. A preferred gas provided during suchdeposition might be either one gas or a combination of various gases,including the absence of any helium. Further, lower temperaturedepositions can result in greater transparency than higher temperaturedepositions. Exemplary plots of various parameters as a function ofdeposition temperature and wavelength are shown in our co-pending U.S.patent application Ser. No. 10/661,379 filed on Sep. 12, 2003, entitled“Transparent Amorphous Carbon Structure In Semiconductor Devices”,naming Weimin Li and Zhiping Yin as inventors, as depicted in FIGS. 1B,1C, 1D, and 1E, and the text pertaining thereto. By way of example only,an exemplary deposition thickness over the substrate for the amorphouscarbon comprising layer is 4000 Angstroms. If boron and/or nitrogendoping of the amorphous carbon comprising layer is desired, an exemplaryboron source gas is B₂H₆ at an exemplary flow rate of 1500 sccm, and anexemplary nitrogen source gas is N₂ at an exemplary flow rate of 1000sccm. Where boron doping is desired, an exemplary concentration range inthe layer for boron is from 0.5% atomic to 60% atomic. Where nitrogendoping is desired, an exemplary concentration range in the layer fornitrogen is from 0.1% atomic to 20% atomic.

After depositing the amorphous carbon comprising layer, the substrate isremoved from the deposition chamber. Thereafter, an oxygen containingcleaning gas is flowed through the remote plasma generator, into the gasoutput manifold, and into the deposition chamber. A plasma is generatedwithin the deposition chamber with the oxygen containing cleaning gaseffective to remove at least some of the amorphous carbon from thedeposition chamber internal surfaces. By way of example only, line 44 inFIG. 1 could be utilized for flowing the oxygen containing cleaning gasas stated. In one embodiment, the remote plasma generator does notgenerate plasma during the oxygen containing cleaning gas flowtherethrough. In another but lesser preferred embodiment, the remoteplasma generator generates plasma from and during the oxygen containingcleaning gas flowing therethrough, along with plasma generation withindeposition chamber DC. Most preferably, the stated depositings andcleanings are conducted without breaking any vacuum within thedeposition chamber, and/or without exposing the deposition chamber toatmospheric conditions.

In another implementation, a method of chemical vapor depositing anamorphous carbon comprising layer on a substrate includes providing adeposition tool comprising a deposition chamber, a gas output manifoldin upstream fluid communication with the deposition chamber, and aremote plasma generator in upstream fluid communication with the gasoutput manifold. The gas output manifold comprises at least one gasoutput to the deposition chamber and at least three gas inputs. The atleast three inputs comprise a first gas input line fed by at least anitrogen deposition precursor source line, a silicon depositionprecursor source line, and an oxygen deposition precursor source line.One of the at least three gas inputs comprises a second gas input linefed by at least one carbon deposition precursor source line. Another ofthe three gas inputs comprises a third gas input line fed by the remoteplasma generator. At least one cleaning gas input line feeds the remoteplasma generator, with such comprising an amorphous carbon cleaning gasinput and an Si₃N₄ or Si_(x)O_(y)N_(z) cleaning gas input. By way ofexample only, the chemical vapor deposition apparatus 10 of FIG. 1 isbut one exemplary deposition tool utilizable in accordance with thisaspect of the invention.

A substrate is positioned within the deposition chamber. Thereafter, acarbon comprising gas is flowed to the gas output manifold through thesecond gas input effective to deposit an amorphous carbon comprisinglayer on the substrate within the deposition chamber and over at leastsome deposition chamber internal surfaces. Preferred carbon comprisinggases and attributes of the amorphous carbon comprising layer areotherwise as described above.

Aspects of the invention and another implementation comprise a method ofchemical vapor depositing at least one of Si₃N₄ and Si_(x)O_(y)N_(z) ona substrate. In such implementation, provided is a deposition toolcomprising a deposition chamber, a gas output manifold in upstream fluidcommunication with the deposition chamber, and a remote plasma generatorin upstream fluid communication with the gas output manifold. The gasoutput manifold comprises at least one gas output to the depositionchamber and at least three gas inputs. The at least three gas inputsinclude a first gas input line fed by at least a nitrogen depositionprecursor source line, a silicon deposition precursor source line, andan oxygen deposition precursor source line. The at least three gasinputs include a second gas input line fed by at least one carbondeposition precursor source line. The at least three gas inputs includea third gas input line fed by the remote plasma generator. At least onecleaning gas input line feeds the remote plasma generator, with suchcomprising an amorphous carbon cleaning gas input and a Si₃N₄ orSi_(O)y_(N) _(z) cleaning gas input. By way of example only, thechemical vapor deposition apparatus 10 depicted in FIG. 1 constitutesone such exemplary deposition tool usable in accordance with thismethodical aspect of the invention.

A substrate is positioned within the deposition chamber. A silicondeposition precursor and at least one of a nitrogen deposition precursorand an oxygen deposition precursor are flowed through the first gasinput line to the gas output manifold effective to deposit at least oneof Si₃N₄ and Si_(x)O_(y)N_(z) on the substrate within the depositionchamber and over at least some deposition chamber internal surfaces. Inone implementation, hydrogen is incorporated with the at least one ofSi₃N₄ and Si_(x)O_(y)N_(z). In one implementation, the flowing iseffective to deposit Si₃N₄. In one implementation, the flowing iseffective to deposit Si_(x)O_(y)N_(z). In one implementation, theflowing is effective to deposit Si_(x)O_(y)N_(z) where z is greater thanzero. A specific example of depositing Si_(x)O_(y)N_(z) where z isgreater than zero includes shower head—substrate support/susceptorspacing of 590 mils, power at 500 watts, support/susceptor temperatureat 375° C., pressure at 4 Torr, NH₃ flow at 50 sccm, N₂O flow at 229sccm, SiH₄ flow at 192 sccm, and N₂ flow at 6.4 slm using the FIG. 1equipment. A specific example of depositing Si₃N₄ includes showerhead—substrate support/susceptor spacing of 520 mils, power at 785watts, support/susceptor temperature at 375° C., pressure at 4.8 Torr,NH₃ flow at 190 sccm, SiH₄ flow at 480 sccm, and N₂ flow at 6.4 slmusing the FIG. 1 equipment.

The invention also contemplates deposition of both a) an amorphouscarbon comprising layer on a substrate and b) at least one of Si₃N₄ andSi_(x)O_(y)N_(z) on a substrate. Such can be conducted separately asdescribed above. Yet in another considered aspect, a method ofdepositing both comprises positioning a substrate within a depositionchamber. A layer comprising at least one of Si₃N₄ and Si_(x)O_(y)N_(z)is deposited over the substrate within the deposition chamber and overat least some deposition chamber internal surfaces. A layer comprisingamorphous carbon is deposited over the substrate within the depositionchamber and over at least some deposition chamber internal surfaces. Thedepositing of the layer comprising at least one of Si₃N₄ andSi_(x)O_(y)N_(z) could occur before depositing of the amorphous carboncomprising layer, or after. The depositing of the layer comprising atleast one of Si₃N₄ and Si_(x)O_(y)N_(z), and the depositing of theamorphous carbon comprising layer, occur prior to any removing of thesubstrate from the deposition chamber once it has been positionedtherein for depositing. The preferred methods of depositing such layersand other attributes are as described above.

After the stated depositings, the substrate is removed from thedeposition chamber. Thereafter, at least some of the at least one ofSi₃N₄ and Si_(x)O_(y)N_(z) is removed from the deposition chamberinternal surfaces with a suitable cleaning gas at subatmosphericpressure. Such cleaning gas is preferably subjected to remote plasmageneration prior to flowing to the deposition chamber. Further afterremoving the substrate from the deposition chamber, at least some of theamorphous carbon comprising layer is removed from the deposition chamberinternal surfaces with an amorphous carbon comprising cleaning gas atsubatmospheric pressure. Any order of the respectively stated cleaningsas just so stated is contemplated, and as might be decided based uponthe order of deposition of the respective layers. Further, such statedcleanings occur prior to any exposure of the deposition chamber to roomatmospheric pressure after the substrate has been removed from thechamber. By way of example only, exemplary preferred equipmentutilizable in conducting the just stated method is the chemical vapordeposition apparatus of FIG. 1. Preferred attributes are otherwise asstated above, and for example also as specifically stated in claims72-97 of this original filed priority patent application from which thispatent matured, and which is not here repeated for brevity. Therespective stated removings with the cleaning gases may be conductedafter every wafer/substrate that is deposition processed in thedeposition chamber (preferred), or only after some plurality ofwafers/substrates have been deposition processed in the depositionchamber (less preferred).

All methodical aspects of the invention which were reduced-to-practicewere done so utilizing the chemical vapor deposition apparatus ofFIG. 1. Further, the apparatus aspects of this invention which werereduced-to-practice were done so by modifying an Applied Materials (ofSanta Clara, Calif.) Producer CVD Apparatus specifically adapted fordepositing inorganic dielectric anti-reflective coating materials. Theprior art Applied Materials equipment encompassed the schematic of FIG.1 with the exception of not including the associated hardware and flowlines of lines 40, 42 and 44, and having a different output manifolddesign. Further, two deposition chambers fed in parallel by two of thedifferent output manifold designs are used in the original AppliedMaterials Producer CVD equipment.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1. A chemical vapor deposition apparatus comprising: a depositionchamber configured to receive a substrate to be deposited upon; a remoteplasma generator; a gas output manifold in fluid communication with thedeposition chamber, the gas output manifold comprising at least one gasoutput to the deposition chamber and at least three gas inputs, the atleast three gas inputs comprising: a first gas input line fed by atleast a nitrogen deposition precursor source line, a silicon depositionprecursor source line, and an oxygen deposition precursor source lineeffective to deposit at least one of Si₃N₄ and Si_(x)O_(y)N_(z) on asubstrate received within the deposition chamber and over at least somedeposition chamber internal surfaces; a second gas input line fed by atleast one carbon deposition precursor source line effective to depositan amorphous carbon comprising material on a substrate received with thedeposition chamber surface and over at least some deposition chamberinternal surfaces; and a third gas input line fed by the remote plasmagenerator; and at least one cleaning gas input line feeding the remoteplasma generator, the at least one cleaning gas input line comprising anamorphous carbon cleaning gas input and an Si₃N₄ or Si_(x)O_(y)N_(z)cleaning gas input.
 2. The apparatus of claim 1 further comprising atleast one plasma generating electrode within the deposition chamber. 3.The apparatus of claim 1 wherein the gas output manifold has only onegas output.
 4. The apparatus of claim 1 wherein the gas output manifoldhas only three gas inputs.
 5. The apparatus of claim 1 wherein the gasoutput manifold has only one gas output and has only three gas inputs.6. The apparatus of claim 1 wherein the gas output manifold is receivedexternally of the deposition chamber.
 7. The apparatus of claim 1further comprising a gas showerhead received within the depositionchamber and to which the gas output manifold feeds.
 8. The apparatus ofclaim 7 wherein the gas output manifold is received externally of thedeposition chamber.
 9. The apparatus of claim 1 comprising only onecleaning gas input line feeding the remote plasma generator.
 10. Theapparatus of claim 9 wherein the gas output manifold has only one gasoutput and has only three gas inputs.
 11. The apparatus of claim 1wherein the amorphous carbon cleaning gas input is configured forfeeding oxygen as the amorphous carbon cleaning gas.
 12. The apparatusof claim 1 wherein the Si₃N₄ or Si_(x)O_(y)N_(z) cleaning gas input isconfigured for feeding NF₃ as the Si₃N₄ or Si_(x)O_(y)N_(z) cleaninggas.
 13. The apparatus of claim 1 wherein the amorphous carbon cleaninggas input is configured for feeding oxygen as the amorphous carboncleaning gas, and the Si₃N₄ or Si_(x)O_(y)N_(z) cleaning gas input isconfigured for feeding NF₃ as the Si₃N₄ or Si_(x)O_(y)N_(z) cleaninggas.
 14. The apparatus of claim 1 wherein the at least one carbondeposition precursor source line is configured for feeding a hydrocarbonas a carbon deposition precursor gas effective to deposit an amorphouscarbon comprising layer which is transparent to visible light.
 15. Theapparatus of claim 1 wherein the oxygen deposition precursor source lineis configured to feed N₂O as an oxygen source gas, the nitrogendeposition precursor source line is configured to feed at least one ofNH₃ and N₂ as a nitrogen source gas, and the silicon depositionprecursor source line is configured to feed SiH₄ as a silicon sourcegas.
 16. The apparatus of claim 15 wherein the at least one carbondeposition precursor source line is configured for feeding a hydrocarbonas a carbon deposition precursor gas effective to deposit an amorphouscarbon comprising layer which is transparent to visible light.
 17. Achemical vapor deposition apparatus comprising: a deposition chamberconfigured to receive a substrate to be deposited upon; a remote plasmagenerator; a gas output manifold in fluid communication with thedeposition chamber, the gas output manifold comprising at least one gasoutput to the deposition chamber and at least three gas inputs, the atleast three gas inputs comprising: a first gas input line fed by atleast a nitrogen deposition precursor source line, a silicon depositionprecursor source line, an oxygen deposition precursor source line, and afirst inert deposition process gas source line effective to deposit atleast one of Si₃N₄ and Si_(x)O_(y)N_(z) on a substrate received withinthe deposition chamber and over at least some deposition chamberinternal surfaces, the first gas input line being fed by a second inertdeposition process gas source line configured for a lower inert gas flowrate than said first inert deposition process gas source line isconfigured; a second gas input line fed by at least one carbondeposition precursor source line operable with the second inertdeposition process gas source line effective to deposit an amorphouscarbon comprising material on a substrate received with the depositionchamber surface and over at least some deposition chamber internalsurfaces; and a third gas input line fed by the remote plasma generator;and at least one cleaning gas input line feeding the remote plasmagenerator, the at least one cleaning gas input line comprising anamorphous carbon cleaning gas input and an Si₃N₄ or Si_(x)O_(y)N_(z)cleaning gas input.
 18. The apparatus of claim 17 wherein the secondinert deposition process gas source line joins with the oxygendeposition precursor source line upstream of the first gas input line.19. The apparatus of claim 17 wherein the second inert depositionprocess gas source line joins with the first inert deposition processgas source line upstream of the first gas input line.
 20. The apparatusof claim 17 wherein, the second inert deposition process gas source linejoins with the oxygen deposition precursor source line upstream of thefirst gas input line; and the second inert deposition process gas sourceline joins with the first inert deposition process gas source lineupstream of the first gas input line.
 21. The apparatus of claim 17further comprising at least one plasma generating electrode within thedeposition chamber.
 22. The apparatus of claim 17 wherein the gas outputmanifold has only one gas output.
 23. The apparatus of claim 17 whereinthe gas output manifold has only three gas inputs.
 24. The apparatus ofclaim 17 wherein the gas output manifold has only one gas output and hasonly three gas inputs.
 25. The apparatus of claim 17 wherein the gasoutput manifold is received externally of the deposition chamber. 26.The apparatus of claim 17 further comprising a gas showerhead receivedwithin the deposition chamber and to which the gas output manifoldfeeds.
 27. The apparatus of claim 26 wherein the gas output manifold isreceived externally of the deposition chamber.
 28. The apparatus claim17 comprising only one cleaning gas input line feeding the remote plasmagenerator.
 29. The apparatus of claim 28 wherein the gas output manifoldhas only one gas output and has only three gas inputs.
 30. The apparatusof claim 17 wherein the amorphous carbon cleaning gas input isconfigured for feeding oxygen as the amorphous carbon cleaning gas. 31.The apparatus of claim 17 wherein the Si₃N₄ or Si_(x)O_(y)N_(z) cleaninggas input is configured for feeding NF₃ as the Si₃N₄ or Si_(x)O_(y)N_(z)cleaning gas.
 32. The apparatus of claim 17 wherein the amorphous carboncleaning gas input is configured for feeding oxygen as the amorphouscarbon cleaning gas, and the Si₃N₄ or Si_(x)O_(y)N_(z) cleaning gasinput is configured for feeding NF₃ as the Si₃N₄ or Si_(x)O_(y)N_(z)cleaning gas.
 33. The apparatus of claim 17 wherein the at least onecarbon deposition precursor source line is configured for feeding ahydrocarbon as a carbon deposition precursor gas effective to deposit anamorphous carbon comprising layer which is transparent to visible light.34. The apparatus of claim 17 wherein the oxygen deposition precursorsource line is configured to feed N₂O as an oxygen source gas, thenitrogen deposition precursor source line is configured to feed at leastone of NH₃ and N₂ as a nitrogen source gas, and the silicon depositionprecursor source line is configured to feed SiH₄ as a silicon sourcegas.
 35. The apparatus of claim 34 wherein the at least one carbondeposition precursor source line is configured for feeding a hydrocarbonas a carbon deposition precursor gas effective to deposit an amorphouscarbon comprising layer which is transparent to visible light. 36-97.(canceled)